cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 1/6 BAV99S3 cystek product specification high ?speed double diode BAV99S3 description the BAV99S3 consists of two high-speed switching di odes connected in series, fabricated in planar technology, and encapsulated in the sm all sot-323 plastic smd package. equivalent circuit outline BAV99S3 sot-323 21 3 1anode 2cathode 3common connection anode common connection cathode features ? small plastic smd package ? high switching speed: max. 4ns ? continuous reverse voltage: max. 100v ? repetitive peak reverse voltage: max. 110v ? repetitive peak forward current: max. 450ma . ? pb-free package applications ? high-speed switching in thick and thin-film circuits.
cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 2/6 BAV99S3 cystek product specification absolute maximum ratings @ta=25 , each diode, unless otherwise noted parameters symbol min max unit repetitive peak reverse voltage v rrm - 110 v continuous reverse voltage v r - 100 v continuous forward current(single diode loaded) - 215 continuous forward current(double diode loaded) i f - 125 ma repetitive peak forward current i frm - 450 ma average rectified forward current (note 1) (averaged over any 20ms period) i f(av) - 715 ma non-repetitive peak forward current @square wave, tj=125 prior to surge t=1 s t=1ms t=1s i fsm - - - 2 1 0.5 a a a total power dissipation( note 1 ) ptot 200 mw operating junction temperature range t j -65 +150 c storage temperature range t stg -65 +150 c note 1: device mounted on an fr-5 pcb with area measuring 1.0 0.75 0.062 in. electrical characteristics @ t a =25 , each diode, unless otherwise specified parameters symbol conditions min typ. max unit forward voltage v f i f =1ma i f =10ma i f =50ma i f =150ma - - 715 855 1 1.25 mv mv v v reverse current i r v r =100v v r =25v,tj=150 v r =100v,tj=150 - - 2.5 30 50 a diode capacitance cd v r =0v, f=1mhz - - 1.5 pf reverse recovery time trr when switched from i f =10ma to i r =10ma,r l =100? , measured at i r =1ma - - 4 ns forward recovery voltage vfr when switched from i f =10ma tr=20ns - - 1.75 v thermal characteristics symbol parameter conditions value unit rth, j-a thermal resistance from junction to ambient note 1 625 /w note 1: device mounted on an fr-5 pcb with area measuring 1.0 0.75 0.062 in.
cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 3/6 BAV99S3 cystek product specification ordering information device package shipping marking BAV99S3 sot-323 (pb-free) 3000 pcs / tape & reel a7 characteristic curves forward current vs ambient temperature 0 25 50 75 100 125 150 175 200 225 250 0 50 100 150 200 ambient temperature---ta() forward current---if(ma) single diode loaded double diode loaded forward current vs forward voltage 0 25 50 75 100 125 150 175 200 225 250 275 0 0.2 0.4 0.6 0.8 1 1.2 1.4 forward voltage---vf(v) forward current---if(ma ) non-repetitive peak forward current vs pulse duration 0.1 1 10 100 1 10 100 1000 10000 pulse duration---tp(s) non-repetitive peak forward current---ifsm(a) diode capacitance vs reverse voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 reverse voltage---vr(v) diode capacitance---cd(pf)
cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 4/6 BAV99S3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 5/6 BAV99S3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c328s3 issued date : 2009.09.25 revised date : 2010.10.21 page no. : 6/6 BAV99S3 cystek product specification sot-323 dimension marking: l4_ 3-lead sot-323 plastic surface mounted package. cystek package code: s3 a7 he e a a1 q lp e1 e bp 12 3 d w b v a z detail z a c 0 12 scale mm style:pin.1. anode 2. cathode 3.common connection inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.0315 0.0433 0.80 1.10 e1 0.0256 - 0.65 - a1 0.0000 0.0039 0.00 0.10 he 0.0787 0.0886 2.00 2.25 bp 0.0118 0.0157 0.30 0.40 lp 0.0059 0.0177 0.15 0.45 c 0.0039 0.0098 0.10 0.25 q 0.0051 0.0091 0.13 0.23 d 0.0709 0.0866 1.80 2.20 v 0.0079 - 0.2 - e 0.0453 0.0531 1.15 1.35 w 0.0079 - 0.2 - e 0.0512 - 1.3 - - - 10 0 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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